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| PD- 91793 IRG4BC20SD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * Extremely low voltage drop 1.4Vtyp. @ 10A * S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. * Very Tight Vce(on) distribution * IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.4V @VGE = 15V, IC = 10A n-cha nn el Benefits * Generation 4 IGBT's offer highest efficiencies available * IGBT's optimized for specific application conditions * HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing * Lower losses than MOSFET's conduction and Diode losses TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 19 10 38 38 7.0 38 20 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. --- --- --- --- --- Typ. --- --- 0.50 --- 2 (0.07) Max. 2.1 3.5 --- 80 --- Units C/W g (oz) www.irf.com 1 9/23/98 IRG4BC20SD Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 -- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 0.75 VCE(on) Collector-to-Emitter Saturation Voltage -- 1.40 -- 1.85 -- 1.44 VGE(th) Gate Threshold Voltage 3.0 -- VGE(th)/TJ Temperature Coeff. of Threshold Voltage -- -11 gfe Forward Transconductance 2.0 5.8 ICES Zero Gate Voltage Collector Current -- -- -- -- VFM Diode Forward Voltage Drop -- 1.4 -- 1.3 IGES Gate-to-Emitter Leakage Current -- -- V(BR)CES Max. Units Conditions -- V VGE = 0V, IC = 250A -- V/C VGE = 0V, I C = 1.0mA 1.6 IC = 10A VGE = 15V -- V IC = 19A See Fig. 2, 5 -- IC = 10A, TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC = 10A 250 A VGE = 0V, VCE = 600V 1700 VGE = 0V, VCE = 600V, TJ = 150C 1.7 V IC = 8.0A See Fig. 13 1.6 IC = 8.0A, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr I rr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Diode Peak Reverse Recovery Current -- -- Diode Reverse Recovery Charge -- -- Diode Peak Rate of Fall of Recovery -- During tb -- Typ. 27 4.3 10 62 32 690 480 0.32 2.58 2.90 64 35 980 800 4.33 7.5 550 39 7.1 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 40 IC = 10A 6.5 nC VCC = 400V See Fig. 8 15 VGE = 15V -- TJ = 25C -- ns IC = 10A, VCC = 480V 1040 VGE = 15V, RG = 50 730 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 11,18 4.5 -- TJ = 150C, See Fig. 10,11, 18 -- ns IC = 10A, VCC = 480V -- VGE = 15V, RG = 50 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 55 ns TJ = 25C See Fig. 90 TJ = 125C 14 IF = 8.0A 5.0 A TJ = 25C See Fig. 8.0 TJ = 125C 15 VR = 200V 138 nC TJ = 25C See Fig. 360 TJ = 125C 16 di/dt = 200As -- A/s TJ = 25C See Fig. -- TJ = 125C 17 2 www.irf.com IRG4BC20SD 16 For both: LOAD CURRENT (A) 12 D uty cy cle: 50% TJ = 125C T s ink = 90C G ate drive as specified P ow e r Dis sip ation = 13 W S q u a re w a v e : 8 6 0% of rate d volta ge I 4 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) I C , Collector Current (A) TJ = 150 o C 10 10 TJ = 150 C TJ = 25 C V GE = 15V 20s PULSE WIDTH 1.0 2.0 3.0 4.0 TJ = 25 o C 1 0.0 1 5 6 7 8 V CC = 50V 5s PULSE WIDTH 9 10 11 12 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BC20SD 20 3.0 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH I C = 20 A Maximum DC Collector Current(A) 15 10 2.0 5 I C = 10 A I C = 5.0A 5A 1.0 -60 -40 -20 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 0.50 0.20 0.10 0.05 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC20SD 1000 800 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 10A 16 C, Capacitance (pF) Cies 600 12 400 8 Coes 200 4 Cres 0 1 10 0 0 5 10 15 20 25 30 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.0 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C I C = 10A 100 RG = 50 VGE = 15V VCC = 480V IC = 20 A 2.9 10 IC = 10 A IC = 1 5A 2.8 2.7 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RGR, Gate Resistance () G, Gate Resistance TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC20SD 14 10 8 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ 12 VCC VGE = 50 = 150 C = 480V = 15V 100 VGE = 20V T J = 125 oC 10 6 4 2 SAFE OPERATING AREA 0 0 4 8 12 16 20 1 1 10 100 1000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A ) 10 TJ = 1 50 C TJ = 1 25 C TJ = 25 C 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 F o rw a rd V o lta g e D ro p - V F M (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC20SD 100 100 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 80 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C IF = 16 A t rr - (ns) 60 I F = 8 .0A I IR R M - (A ) I F = 1 6A 10 40 IF = 8 .0 A I F = 4.0 A I F = 4 .0 A 20 0 100 d i f /d t - (A / s) 1000 1 100 1000 di f /dt - (A /s) Fig. 14 - Typical Reverse Recovery vs. dif/dt 500 Fig. 15 - Typical Recovery Current vs. dif/dt 10000 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 400 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 300 d i(re c )M /d t - (A / s ) Q R R - (n C ) I F = 16 A 200 I F = 4.0 A 1000 IF = 8 .0 A I F = 1 6A I F = 8 .0A 100 IF = 4.0 A 0 100 100 100 di f /dt - (A /s) 1000 1000 d i f /d t - (A / s ) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4BC20SD Same ty pe device as D .U.T. 80% of Vce 430F D .U .T. 90% Vge VC 10% 90% td(off) Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf 10% IC 5% t d(on) tr tf t=5s E on E ts = (Eon +Eoff ) E off Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 E re c = t4 V d idIct dt Vd d t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC20SD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000 F 100 V Vc* D.U.T. RL= 0 - 480V 480V 2 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4BC20SD Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG = 50 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Notes: Case Outline TO-220AB 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 1 0 .5 4 (.41 5 ) 1 0 .2 9 (.40 5 ) 3.78 (.149) 3.54 (.139) -A6.47 (.255 ) 6.10 (.240 ) 1.15 (.045) M IN -B - 4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 2 3 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 2 0 A B . 3X 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 3.96 (.160) 3.55 (.140) LEAD 1234- A S S IG N M E N T S GA TE C O L LE C T O R E M IT T E R C O L LE C T O R 4.06 (.160 ) 3.55 (.140 ) 0.93 (.037) 0.69 (.027) MBAM 1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) 2 .5 4 (.1 0 0) 2X 3X 3X 0.55 (.022) 0.46 (.018) 0 .3 6 (.01 4 ) 2.92 (.115) 2.64 (.104) CONFORMS TO JEDEC OUTLINE TO-220AB D im e ns io ns in M illim e ters a nd (In c he s ) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 9/98 10 www.irf.com |
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